Copper electroless deposition on a titanium-containing surface

ABSTRACT

A method for depositing copper on a titanium-containing surface of a substrate is provided. The method includes forming a patterned catalyst material on the substrate, such that the titanium-containing surface is exposed in selected regions. The catalyst material has an oxidation half-reaction potential having a magnitude that is greater than a magnitude of a reduction half-reaction potential of titanium dioxide. Copper is then deposited from an electroless solution onto the exposed regions of the titanium-containing surface.

This is a division of application Ser. No. 08/916,219, filed Aug. 22,1997, (pending), which is incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to methods for forming a layer of copperusing electroless deposition, and, in particular, for forming a layer ofcopper on a titanium-containing surface using electroless deposition andan adjacent catalyst layer.

BACKGROUND OF THE INVENTION

In the fabrication of a semiconductor integrated circuit (IC), it isdesirable to fabricate the IC with materials having a low resistivity(i.e., property of resistance to current flow) in order to optimize itselectrical performance by decreasing the resistance of the IC. Lowerresistance ICs allow faster processing of information due to a smallerdelay time associated with resistance to current flow therethrough.

Individual devices are typically connected within an IC using metallines (i.e., conductive layers), such as aluminum or copper layers.Resistivity of metal lines plays an increasingly important role in theoverall resistance of an IC. As ICs become more dense, wiring lengthincreases. Furthermore, wiring pitch decreases, which effectivelydecreases the wiring width. As the wiring width decreases, resistivityof the wiring material becomes a dominant factor as compared toparasitic capacitance between wires (i.e., that associated with deviceresistance). Thus, it is desirable to decrease the resistivity of wiringmaterial within an IC.

It is preferable to use copper within an IC, particularly forinterconnect lines and structures (i.e., conductive digit lines andplugs connecting the conductive layers), because copper has a lowerresistivity and a higher resistance to electromigration (i.e., thetransport of metal atoms in conductors carrying large current densities,resulting in morphological degradation of the conductors) than aluminum.Voids (i.e., regions of macroscopic depletion of atoms) and hillocks(i.e., regions of macroscopic accumulation of atoms) are produced byelectromigration. One reason why copper is less susceptible to voidingthan aluminum is because the grain boundary diffusion of vacancies incopper has a significantly higher activation energy than the same inaluminum.

Techniques for deposition of copper during fabrication of asemiconductor IC have not been selectively controlled in the past. Suchconventional copper deposition techniques include evaporation,sputtering, and chemical vapor deposition (CVD). When using nonselectivedeposition techniques, excess copper often needs to be removed fromsurfaces to which it adheres, but on which copper is not desired. Thisrequires an extra processing step. An etchant, such as a dry,chlorine-based plasma etchant is typically used for removing excesscopper on a surface.

Deposition of copper on certain materials, such as titanium-containingmaterials (e.g., titanium and titanium nitride), has also beenproblematic in the past. Titanium-containing materials are utilized inthe fabrication of interconnect structures in which copper is typicallyformed. For example, titanium-containing diffusion barrier layers arebeneficial when formed between copper and silicon because copper has atendency to diffuse into silicon. The use of diffusion barrier layersprevents the degree of copper migration seen in the absence of adiffusion barrier layer. By using a titanium-containing diffusionbarrier layer, the degree of lattice mismatch between copper and siliconis also minimized, as the lattice spacing of titanium is intermediatebetween that of copper and that of silicon. Previous deposition ofcopper on titanium-containing materials, however, has repeatedly beenplagued with nonuniform thicknesses, poor adhesion, and poor stepcoverage on complex surfaces, such as contact holes and vias.

One deposition technique involves the chemical reduction of a metal ionfrom a metal compound contained in solution onto a catalytically activesurface. This is known as electroless deposition. Consequently, thistechnique has the potential to selectively deposit on catalyticallyactive surfaces. Conventional electroless copper deposition ontitanium-containing materials, however, has not been perfected. Forexample, electrodeposition baths (i.e., ionic solutions without anyexternal electrodes) containing copper sulfate (CuSO₄) and sulfuric acid(H₂ SO₄) often experience difficulties with rapid oxidation (i.e., theformation of native oxides) of the titanium-containing material surfaceduring deposition, which prevents adequate copper layer adhesion.Similarly, baths containing copper pyrophosphate (Cu₂ P₂ O₇), potassiumpyrophosphate (K₂ H₂ P₂ O₇), ammonium hydroxide (NH₄ OH), and ammoniumnitrate (NH₄ NO₃), or baths containing copper fluoroborate (Cu[BF₄ ]₂),fluoroboric acid (HBF₄), and boric acid (HBO₃) do not provide adequatecopper layer adhesion due to the fact that deposited copper dissolvesaway in water. Another electrodeposition bath containing tetra-ammoniumcuprate (Cu[NH₃ ]₄) and ammonium hydroxide (NH₄ OH) does not depositcopper well on titanium-containing diffusion barrier layer materialseither.

Conventional electroless copper deposition baths often contain alkalielements, such as lithium, sodium, and potassium, to increase the pH andthereby increase the reaction rate of the electroless depositionprocess. Alkali components provide a relatively large increase in the pHof an electroless copper deposition bath for a given amount of thealkali components. However, it is undesirable to utilize large amountsof alkali elements in the fabrication of ICs because residual alkalimetal ions easily drift under applied electric fields to interfaces,such as silicon/silicon dioxide interfaces within an IC, introducingpositive ionic charge in undesired areas that alters devicecharacteristics. This phenomenon potentially causes IC failure, due tosuch altering of device characteristics.

Another technique for depositing copper on a substrate from anelectroless deposition solution includes using a nucleating layerbetween the substrate and the deposited copper layer in order toinitiate copper deposition. In the past, aluminum has been utilized forsuch a nucleating layer. While the use of such a layer catalyzes thereaction, it does not increase the reaction rate of copper depositionenough to allow for an alkali-free electroless deposition solution to beused in conjunction therewith. Furthermore, when using such a technique,an aluminum layer remains between the copper layer and the substrate.This can potentially cause adhesion problems and increase theresistivity of interconnects when used therein due to the higherresistivity of aluminum as compared to copper. Resistivity ofinterconnects formed in such a manner is also typically furtherincreased when using such a technique because an oxide layer usuallyremains on the aluminum layer prior to depositing the copper layerthereon.

Another problem with conventional electroless copper deposition is thatimplanted nucleation sites need to be formed on the surface on whichcopper is to be deposited when a nucleation layer is not formed on theunderlying surface. Conventionally, electroless deposition of copperonto certain materials, such as titanium-containing materials, will notoccur in the absence of implants (e.g., gold, silver, palladium, orplatinum) in the underlying surface or activation baths containingsimilar components. The presence of implants in the underlying surfaceor the activation bath is needed to provide nucleation sites for thecopper deposition reaction. Once copper nucleation is initialized,however, deposited copper acts as its own catalyst via an autocatalyticmechanism (i.e., copper provides more of the catalyzingmechanism--itself--as it is created).

Electroless deposition of copper has been used in printed circuit board(PCB) manufacturing and other applications where critical dimensions areten microns or greater. Typically, deposition of copper within an ICrequires that copper be accurately deposited to much smaller criticaldimensions. However, many conventional electroless copper depositiontechniques have not perfected accurate deposition at such small criticaldimensions.

Thus, there is a need for a method for electroless deposition of copperand other materials that is generally fast and efficient. There is afurther need for a method for electroless deposition, such as copperelectroless deposition, that does not require nucleation layers,implants, or activation baths for providing nucleation sites on surfaceson which the material is to be deposited. It is further desirable toprovide a method for electroless deposition that provides a highconductivity layer of deposited material that adheres well to asubstrate.

SUMMARY OF THE INVENTION

The present invention provides methods for the electroless deposition ofcopper on a titanium-containing surface of a substrate. One method fordepositing copper on a substrate includes providing the substrate havinga titanium-containing surface and forming a patterned catalyst materialon the substrate, such that the titanium-containing surface is exposedin selected regions. The catalyst material has a corresponding oxidationhalf-reaction potential having a magnitude that is greater than amagnitude of the reduction half-reaction potential of titanium dioxide(a native oxide that spontaneously forms on the surface of thetitanium-containing surface). Preferably, the catalyst material isselected from the group of silicon, aluminum, and chromium. Copper isthen deposited from an electroless solution on the exposed regions ofthe titanium-containing surface.

According to another aspect of the invention, the step of depositingcopper includes plating copper onto the substrate out of a solutioncontaining a copper source and a reducing agent. The solution canfurther contain at least one ligand, surfactant, oxidizing agent, orcombinations thereof. The electroless solution preferably has a pH ofabout 9 to about 12. Furthermore, by using the method of the invention,the electroless solution can preferably be substantially free of alkalicomponents (i.e., having less than about 5% total alkali components byatomic weight, but preferably substantially no alkali components byweight), as is desirable in semiconductor IC processing. Copperdeposition according to the method of the invention occurs as oxidationof the catalyst layer removes native oxides from the exposed regions ofthe titanium-containing surface.

The substrate is preferably a semiconductor-based substrate having atitanium-containing surface. The substrate can include only atitanium-containing material or it can include a patterned or blankettitanium-containing layer positioned over another material. Thetitanium-containing surface can be titanium or titanium nitride, forexample. In one embodiment, the substrate includes a printed circuitboard having a titanium-containing surface. The titanium-containingsurface can be of a variety of thicknesses, but, typically, thethickness is about 50 Angstroms to about 1,000 Angstroms.

In another embodiment of the invention, the method includes providing asubstrate having a patterned titanium-containing surface and forming apatterned aluminum layer on the substrate, such that the patternedtitanium-containing surface is exposed in selected regions. In apreferred embodiment, the patterned aluminum layer has a thickness of atleast about 1,000 Angstroms. Copper is then formed on the exposedpatterned titanium-containing surface regions adjacent to the patternedaluminum layer using electroless copper deposition. Copper depositionoccurs as oxidation of the aluminum layer removes native oxides from theexposed regions of the patterned titanium-containing surface. Accordingto this aspect, the method can further include a step of removing thepatterned aluminum layer.

In yet another embodiment of the invention, a method for forming a plugin an integrated circuit (IC) interconnect structure includes providinga substrate as described above, and then forming an insulating layer onthe substrate. A via is then defined in the insulating layer over anactive area (e.g., a source/drain region of a transistor or an upperplate electrode of a capacitor, to illustrate just a couple of a widevariety of such electronically active areas in an IC) in the substrate.A titanium-containing layer is then formed in the via and over theinsulating layer. A patterned catalyst layer is then formed over thetitanium-containing layer adjacent to the via. The via is then at leastpartially filled, although it can be filled or overfilled, with copperusing electroless deposition. In this method, copper deposition isbelieved to initiate at an interface between the titanium-containinglayer and the catalyst layer. In a further embodiment, the methodincludes a step of removing the patterned catalyst layer. In yet anotherembodiment, the method includes a step of removing thetitanium-containing layer. In still another embodiment, the methodincludes a step of removing excess copper (i.e., the overfilled portionof the copper), as by planarization, for example.

In yet another embodiment of the invention, a dual damascene method forforming an interconnect structure in an IC includes providing asubstrate and then forming an insulating layer on the substrate. A viais then defined in the insulating layer over an active area in thesubstrate. A titanium-containing layer is then formed in the via andover the insulating layer and a patterned catalyst layer is formed overthe titanium-containing layer, such that an exposed region of theinsulating layer surrounds the via. Another step includes at leastpartially filling the via, although it can be filled or overfilled, andthe exposed region of the insulating layer with copper using electrolessdeposition. In a further embodiment, the method comprises the step ofremoving a patterned catalyst layer. In yet another embodiment, themethod includes a step of removing the titanium-containing layer. Instill another embodiment, the method includes a step of removing theexcess copper as described above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A, 1B and 1C are cross-sectional representations of copperdeposited on a substrate in accordance with the present invention, andintermediate structures thereof.

FIGS. 2A, 2B and 2C are cross-sectional representations of copperdeposited using a dual damascene process in accordance with the presentinvention, and intermediate structures thereof.

FIGS. 3A, 3B and 3C are cross-sectional representations of copperdeposited using a single damascene process in accordance with thepresent invention, and intermediate structures thereof.

FIGS. 4A, 4B and 4C are cross-sectional representations of copperdeposited on a printed circuit board in accordance with the presentinvention, and intermediate structures thereof.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, and in which is shown byway of illustration specific embodiments in which the invention may bepracticed. These embodiments are described in sufficient detail toenable those skilled in the art to practice the invention, and it is tobe understood that other embodiments may be utilized and that structuraland chemical changes may be made without departing from the scope of thepresent invention. The following detailed description is, therefore, notto be taken in a limiting sense, and the scope of the present inventionis defined by the appended claims.

Copper is deposited from an electroless deposition solution ontocatalytically active surfaces (i.e., those surfaces that are undergoingreduction in conjunction with the oxidation of a catalyst layer)--namelytitanium-containing surfaces. The titanium-containing surface ispreferably titanium itself, but can also be, for example, titaniumnitride. Also, the titanium-containing surface can be non-patterned(i.e., a blanket titanium-containing layer or substrate) or a patternedlayer.

A surface is made catalytically active by forming a catalyst layeradjacent to the titanium-containing layer on which the copper is to bedeposited. It is to be understood that adjacent, as used herein, ismeant to include physical contact of the catalyst layer with thetitanium-containing layer. The catalyst layer need not be positioneddirectly over the titanium-containing layer. Adjacent is also meant toinclude physical separation of the catalyst layer and thetitanium-containing layer, but which allows for the flow of electronsfrom the catalyst layer to the titanium-containing layer. The depositionreaction proceeds due to the oxidation of the catalyst layer, providingelectrons for the reduction of titanium dioxide (i.e., native oxide thatundesirably, spontaneously forms on metallic-containing material) on thetitanium-containing layer on which the copper is deposited. Theresulting copper layer is formed directly over the underlyingtitanium-containing layer on which it is desired, without any nucleationlayers or implanted sites therebetween. The reduction of the titaniumdioxide on the underlying surface provides a low resistance path toelectrical current due to the removal of native oxides on the surface ofthe underlying layer.

It is to be understood that the term substrate, as used herein, includesa wide variety of semiconductor-based structures and other structures onwhich copper is deposited. Substrates are often used as building blockswithin a semiconductor integrated circuit (IC). However, substrate, asused herein, can also refer to a printed circuit board (PCB) or otherstructures on which copper is deposited. A substrate can be a singlelayer of material, such as a silicon wafer. Substrate is also to beunderstood as including silicon-on-sapphire (SOS) technology,silicon-on-insulator (SOI) technology, doped and undoped semiconductors,epitaxial layers of silicon supported by a base semiconductor, as wellas other semiconductor-based structures, including any number of layersas is well known to one skilled in the art. Furthermore, when referenceis made to a substrate in the following description, previous processsteps may have been utilized to form regions/junctions in a basesemiconductor structure.

To form a conducting layer, such as a metal line or a metal plug, in anIC interconnect structure, oftentimes other inorganic layers (e.g.,insulating layers and conducting layers that connect individual deviceswithin an IC) are first formed as part of a substrate. For example, whenforming a contact to an active area of an IC, one or more layers ofmaterial (e.g., titanium, titanium silicide, and/or titanium nitride)are commonly formed prior to at least partially filling a contact holewith a metal. Titanium silicide serves to lower the resistivity of thecontact, while titanium nitride serves as a diffusion barrier betweenthe active area and the conducting layer.

The process used for depositing such layers (e.g., insulating layers)within an IC is well known to one skilled in the art. There are numerousmethods and sequences of steps available for forming titanium silicideand titanium nitride, for example. Oftentimes, titanium is depositedover an active area (i.e., an area which typically contains silicon in asemiconductor IC) and annealed to form titanium silicide. Titaniumnitride is often formed by annealing a deposited titanium layer in anitrogen-containing atmosphere. However, both titanium silicide andtitanium nitride can also be sputtered onto a substrate, as well asbeing formed using other techniques well known to one skilled in theart. The thickness of such layers is typically about 50 Angstroms toabout 1,000 Angstroms.

While the invention is described with reference to depositing copperonto a titanium-containing material, copper may deposit on othersurfaces adjacent to the titanium-containing material, such as silicondioxide or borophosphosilicate glass (BPSG), but the copper will nottypically adhere to or nucleate on such surfaces. Copper can beadequately deposited on other surfaces, however, having a reductionhalf-reaction potential similar to that of the half-reaction potentialfor the reduction of titanium dioxide (i.e., about -0.86 Volts). Yet,copper will only adequately deposit on such surfaces if the activationenergy for reduction of oxides of that material is not too high ascompared to the activation energy for titanium dioxide reduction. Forexample, the activation energy for reduction of silicon dioxide is veryhigh. Although the reduction half-reaction, SiO₂ +4H⁺ +4e⁻ ---->Si+2H₂O, has a potential of -0.84 Volts, copper does not deposit well onsilicon in accordance with this half-reaction due to the relatively highactivation energy for reduction of silicon dioxide. Thus, although thehalf-reaction potential for silicon dioxide is very similar to that fortitanium dioxide, copper does not adequately adhere to silicon. Itshould be noted that half-reaction potentials utilized in thisdescription are standard potentials (i.e., those at 0.1 MPa pressure and25° C.). Furthermore, due to the desirable use of titanium-containinglayers and copper in semiconductor fabrication, the invention will bedescribed with reference to forming copper on such titanium-containinglayers.

When depositing subsequent layers onto a substrate, the substratesurface is first optionally cleaned using a wide variety of suitablemethods, such as by using KOH or HCl. Such methods are well known to oneskilled in the art. It is preferable to clean the substrate surface toremove contaminants from the substrate surface being processed.Contaminants are often a source of electrical failure within an IC.Therefore, it is important that contaminant levels on the substratesurface being processed are minimized during IC fabrication.

According to this invention, the catalyst layer has an oxidationhalf-reaction potential having a magnitude that is greater than amagnitude of the reduction half-reaction potential of titanium dioxide.In other words, an oxide of the catalyst material has a reductionhalf-reaction potential that is more negative than a reductionhalf-reaction potential of titanium dioxide. For example, the reductionand oxidation half-reaction potentials for aluminum have a magnitude of2.32 and the reduction and oxidation half-reaction potentials oftitanium dioxide have a magnitude of 0.86.

Aluminum oxidation can be the catalyzing reaction. Aluminum is one ofthe few metals that is formed from its corresponding oxide with areduction half-reaction potential that is more negative than thereduction half-reaction potential for formation of titanium fromtitanium dioxide. The reduction half-reaction and potential forreduction to aluminum is the following: H₂ AlO₃ ⁻ +H₂ O+3e⁻ ---->Al+4OH⁻(-2.32 Volts). The reduction half-reaction and potential for reductionto titanium is the following: TiO₂ +4H⁺ +4e⁻ ---->Ti+2H₂ O(--0.86Volts). The half-reaction potential for reduction to aluminum fromaluminum oxide is greater than 1 Volt more negative than thehalf-reaction potential for reduction of titanium dioxide to formtitanium. Thus, when the oxidation half-reaction potential (i.e., thatpotential having an opposite sign than the reduction half-reactionpotential, +2.32 Volts) for aluminum is added to the reductionhalf-reaction potential for titanium dioxide, the overall redox reactionhas a potential of greater than +1 Volt. Overall redox reactions havinga positive potential proceed spontaneously. Thus, aluminum oxidizesspontaneously when placed in the electroless solution, providingelectrons for reduction of titanium dioxide on the catalytictitanium-containing surface. Thus, the reaction will proceed to depositcopper on a titanium-containing surface that is substantially free ofnative oxides (i.e., having native oxides covering less than about 5% ofthe titanium-containing surface area, but preferably having nativeoxides covering substantially none of the titanium-containing surfacearea) because of the aluminum oxidation reaction.

Aluminum is patterned on a substrate as well known to one skilled in theart, such that exposed underlying layers (e.g., titanium or titaniumnitride) are selected areas on which copper is to be deposited. Thethickness of the aluminum layer is not critical to the practice of thisinvention. However, the thickness of the aluminum layer can be about1,000 Angstroms to about 10,000 Angstroms.

Another material, such as chromium or silicon, whose corresponding oxidehas a reduction half-reaction potential that is more negative than thereduction half-reaction potential for titanium dioxide, can be usedinstead of aluminum as the catalyst layer. When adding the correspondingoxidation half-reaction potential for the catalyst layer to thereduction half-reaction potential for titanium dioxide (i.e., -0.86Volts), a positive overall redox potential is obtained, as required forthe reaction to proceed spontaneously.

For example, one catalyzing oxidation half-reaction and potential forsilicon is the following: Si+60HO⁻ ---->SiO₃ ⁻² +3H₂ O+4e⁻ (+1.73Volts). When added to the reduction half-reaction potential for titaniumdioxide, the oxidation half-reaction potential for silicon results in anoverall redox potential of +0.87 Volts.

As another example, one catalyzing oxidation half-reaction and potentialfor chromium is the following: Cr+3OH⁻ ---->Cr(OH)₃ +3e⁻ (+1.3 Volts).Another catalyzing oxidation half-reaction and potential for chromium isthe following: Cr+4OH⁻ ---->CrO₂ ⁻ +2H₂ O+3e⁻ (+1.2 Volts). When addedto the reduction half-reaction potential for titanium dioxide, -0.86Volts, a positive redox potential results. Thus, the reaction proceedsto remove native oxide from the titanium-containing material while thechromium catalyst layer is oxidized.

Aluminum is typically used, however, for the catalyst when depositingcopper in the fabrication of semiconductor-based structures, namely dueto the ease of etching aluminum to form a patterned catalyst layer.Thus, reference will be made to using aluminum oxidation as thecatalyzing reaction throughout the remainder of the description.

When depositing on a titanium-containing surface, due to the effectivereduction of titanium dioxide, a copper layer easily deposits on a cleantitanium-containing (i.e., titanium/titanium nitride and similarmaterials essentially free of native oxides) surface. This results in arelatively low resistivity path through the titanium-containing andcopper layers within an IC. This is particularly useful and applicableto the interconnect structure of an IC, where resistance to electricalcurrent should be minimized.

A substrate having a patterned aluminum layer is placed in anelectroless copper plating solution. Nucleation of the copper layertypically begins at interfaces between aluminum and thetitanium-containing material on which copper is to be deposited (e.g.,titanium or titanium nitride) and then proceeds across the substratesurface by an autocatalytic mechanism (i.e., copper is a catalyst forthe deposition of more copper).

The electroless solution preferably includes at least a copper sourceand reducing agent and often an oxidizing agent to initiate the reducingagent. The reducing agent is needed to reduce the copper source, whichis usually present in solution as copper ions, allowing it to deposit onthe catalytic surface. Any suitable copper source, such as a solublecopper salt, and reducing agent are used, which will allow for copperdeposition on the catalytic titanium-containing surface. For example,copper sulfates, copper oxides, copper perchlorates, and copper iodides,both cuprous and cupric, can be used for the copper source. Examples ofreducing agents include formaldehyde (HCHO), 3-dimethylaminobenzoic acid(DMAB), hypophosphite (H₂ PO₂), tetramethyl ammonium hydroxide (TMAH),ammonium hydroxide (NH₄ OH), potassium hydroxide (KOH), glyoxylic acid(HCOCO₂ H), and similar compounds containing hydroxyl ions. Preferably,TMAH or NH₄ OH is used as the reducing agent in this invention. Thus,the electroless deposition solution is preferably substantially free ofalkali components (i.e., having less than about 5% alkali components byatomic weight, but preferably substantially no alkali components byweight). The temperature of the electroless solution is maintained in arange of about 20° C. to about 80° C. The temperature is preferablymaintained at a constant temperature in this range using any suitablemethod. For example, a standard bipolar heating jacket can be used tomaintain the temperature of the electroless solution.

The pH of the solution is preferably maintained in the range of about 9to about 12. As the pH of the solution increases, the potential for thereduction half-reaction of oxides of the catalyst layer becomes evenmore negative, further promoting copper electroless deposition due tothe more positive redox potential when used adjacent to atitanium-containing surface. If needed, the pH of the solution isadjusted by changing the amount of the reducing agent, for example,TMAH, present in the solution. Decreasing the amount of the reducingagent typically lowers the solution pH, while increasing the amount ofthe reducing agent typically increases the solution pH. However, if thedifference between the potential for the oxidation half reaction and thepotential for the reduction half reaction becomes too large, spontaneouscopper precipitation can occur within the solution instead of on thedesired surface. Thus, chelating agents, such asethylenediaminetetraacetic acid (EDTA) can be added to the solution todecrease the possibility of copper precipitation at higher pHs. Otherexamples of ligands include malic acid (Mal), succinic acid (Suc),tartrate (Tart), citrate (Cit), nitrilotriacetic acid (NTA),triisopropanolamine (TIPA), triethanolamine (TEA), and ethylenediamine(En).

Other additives, such as inorganic and organic additives, can also beadded to the solution to promote stability. Examples of such additivesinclude metal-containing compounds (e.g., vanadium (V), molybdenum (Mo),niobium (Nb), tungsten (W), rhenium (Re), thallium (Ti), antimony (Sb),bismuth (Bi), cerium (Ce), uranium (U), mercury (Hg), silver (Ag),arsenic (As)), sulfur-containing compounds (e.g., sulfite, thiosulfates,sulfates), nitrogen-containing compounds (e.g., tetracyanoethylene,cyanides, pyridines), sulfur- and nitrogen-containing compounds (e.g.,cysteines, cystines, diethyldithiocarbamates, thiosemicarbazide),oxidizing agents (e.g., O₂), and surfactants (e.g., complex organicphosphate esters, alkylphenoxypolyethoxy phosphates,polyethoxypolypropoxy block copolymers, anionic perfluoroalkylsulfonates and carboxylates, non-ionic fluorinated alkyl alkoxylates,non-ionic polyalcohols, such as that sold under the trade name "TritonX," which is commercially available from Aldrich Chemical in St. Louis,Mo., and cationic fluorinated quaternary ammonium compounds).

The final thickness of the copper layer is solution-dependent. Inparticular, the final thickness of the copper layer is typicallydependent on the pH of the electroless solution. A higher pH results ina thicker copper layer. Similarly, a lower pH results in a thinnercopper layer. Typically, the final thickness of the copper layer isabout 4,000 Angstroms to about 8,000 Angstroms.

Copper does not generally deposit on the aluminum layer. Rather, ittends to form next to an interface between an aluminum layer and atitanium-containing layer. If copper does deposit on another surface,such as silicon dioxide or BPSG, it will not typically adhere. Thus, thepresent invention allows simple metal line growth on patternedtitanium-containing surfaces without additional photoresist, mask, andetch steps. Excess aluminum and any underlying layers can be removed byany suitable method, or the materials can be left in place, depending onthe particular application. For example, excess aluminum ortitanium-containing material can be removed using a dry etchant (e.g.,an etchant typically containing a chlorine component when removingaluminum or titanium-containing materials). Due to the difficulties ofdry etching copper at low temperatures (i.e., the reaction of copperwith the chlorine etchant component to form a non-volatile compound attemperatures below 175° C.), copper will not be removed during astandard dry etch, such as those etches used to remove aluminum and/ortitanium-containing material, unless relatively high temperatures areused. For example, aluminum can typically be etched at about 35° C., butcopper is typically etched at temperatures above 175° C. Excessaluminum, however, may not be present on the substrate surface afterdeposition of copper from the electroless solution. During the redoxreaction of the present invention, aluminum reacts to form aluminumoxide (e.g., alumina), which readily dissolves in the electroless copperdeposition solution. Thus, separate aluminum or aluminum oxide removalsteps may not be necessary depending on the reaction time and theelectroless copper deposition solution used.

The copper layer formed using the method of the invention is typicallymore conductive than aluminum metal lines. By using a relatively high pHelectroless deposition solution, the speed of copper deposition isincreased, allowing for a relatively large grain structure in the copperlayer. Furthermore, when anneal steps are necessary after formation ofthe copper layer to optimize the grain size of the copper layer (to makefewer, larger grains th-an the grains in the as-deposited copper layerin order to make the copper layer more conductive), the anneal can beperformed at shorter times and/or lower temperatures due to the finegrain structure of the deposited copper layer. This advantageouslyconserves thermal budget of the IC fabrication process. A thermal budgetfor fabricating an IC is the maximum combination of thermal steps andlength of time during such thermal steps that an IC can withstand beforeits electrical characteristics are potentially degraded. For example, asICs are scaled down in size, junction depths are becoming shallower. Oneof the problems associated with long thermal steps is dopant migrationinto undesired regions. Such shallow junctions are more easily degradedby long thermal steps due to dopant migration.

Furthermore, use of aluminum potentially allows for alkali-freedeposition on titanium-containing surfaces, as well as other substrateshaving a reduction half-reaction potential similar to that of titaniumdioxide. This is due to the aluminum oxidation catalyzing reaction,which speeds up the electroless copper deposition rate. Thus, the pH ofthe solution need not be adjusted using alkali-containing components inorder to further speed up the deposition rate.

The methods of the present invention can be used in a variety oflocations in semiconductor fabrication processes to form a variety ofstructures. For example, they can be used in dual damascene processes,as disclosed in U.S. Pat. No. 4,962,058 (Cronin et al.), and others.They can be used to form plugs and interconnect structures. Examples ofelectroless deposition solutions utilized for this invention follow.

EXAMPLE 1

Intermediate and resulting structures of this example are illustrated inFIGS. 1A to 1C. A titanium layer 20 is patterned (e.g., sputtered,photolithographically masked, and etched) on a silicon substrate 22 to athickness 24 of about 200 Angstroms. An aluminum layer 26 having athickness 27 of about 10,000 Angstroms is then patterned (e.g.,sputtered, photolithographically masked, and etched) over the titaniumlayer 20, leaving an exposed titanium/aluminum interface 28 adjacent toan exposed titanium region 30, as illustrated in FIG. 1A. The aluminumlayer 26 is in contact with the titanium layer 20 at the interface 28.The structure is then plated in a 50 mL aqueous solution containing:

    ______________________________________                                        CuSO.sub.4    0.624         g                                                   EDTA                              0.821 g                                     TMAH                              19.2 mL                                     Triton X                          1 mL                                        HCHO                              0.375 mL                                  Deionized Water                                                                             Remainder (total solution                                                                            volume = 50 mL)                          ______________________________________                                    

to produce a copper layer 32 over the exposed titanium region 30, asillustrated in FIG. 1B. Copper 32 nucleates at the aluminium/titaniuminterface 28 and spreads across the exposed titanium region 30. If it isdesired to stop the deposition of copper 32 prior to depletion of thealuminum 26 on the surface, the structure can be placed in anothersolution, such as water or an acidic solution. The structure is thensubjected to rapid thermal processing (RTP) at about 500° C. to about700° C. to optimize the grain structure of the copper layer 32. Thelower the RTP temperature, the longer the anneal duration. For example,for RTP at about 500° C., about 45 seconds is the anneal duration. Thehigher the RTP temperature, the shorter the anneal duration. Forexample, for RTP at about 700° C., about 15 seconds is the annealduration. Any remaining aluminum layer 26 and titanium layer 20underlying the aluminum layer 26 are then removed using appropriateetchants, such as dry etchants, to produce the structure illustrated inFIG. 1C. In this example, titanium 20 has been described, but titaniumnitride can be substituted for titanium 20 in other embodiments. Othervariations will be apparent to one of ordinary skill in the art.

EXAMPLE 2

Intermediate and resulting structures of this example are illustrated inFIGS. 2A to 2C. An insulating layer 34, such as silicon dioxide, isformed (e.g., by thermally oxidizing silicon) over a silicon substrate22. A via 36 is then defined (e.g., by etching the silicon dioxide toleave an opening through the silicon dioxide having dimensions of thevia) in the insulating layer 34 over an active area in the substrate 22.A titanium layer 20 is then formed (e.g., sputtered,photolithographically masked, and etched) in the via 36 and an adjacentarea to a thickness 24 of about 200 Angstroms.

An aluminum layer 26 is deposited such that an aluminum/titaniuminterface 28 resides on each continuous titanium layer 20 on whichcopper 32 deposition is desired. For example, an aluminum layer 26having a thickness 27 of about 10,000 Angstroms is patterned (e.g.,sputtered, photolithographically masked, and etched) over the titaniumlayer 20, leaving an exposed titanium/aluminum interface 28 facing thevia 36, as illustrated in FIG. 1A. The aluminum layer 26 is patterned asin a dual damascene process, such that copper 32 can at least partiallyfill the via 36 and the area between the patterned aluminum layer 26,forming a copper plug and copper line thereon. Thus, the patternedaluminum layer 26 is formed such that an exposed titanium-containinglayer 20 surrounds the via 36. In a dual damascene process, the exposedinsulating layer region (with or without a titanium-containing layerthereon) adjacent to the via 36 has a larger surface area than the areaof the via 36 in a two-dimensional plane of the substrate 22. To formthe copper plug and copper line thereon, the structure illustrated inFIG. 2A is plated in a 50 mL aqueous solution containing:

    ______________________________________                                        CuSO.sub.4    0.624         g                                                   EDTA                              0.821 g                                     TMAH                              19.2 mL                                     Triton X                          1 mL                                        HCHO                              0.375 mL                                  Deionized Water                                                                             Remainder (total solution                                                                            volume = 50 mL)                          ______________________________________                                    

to produce the structure illustrated in FIG. 2B. Copper 32 nucleates atthe aluminum/titanium interface 28 and spreads into the via 36. If it isdesired to stop the deposition of copper 32 prior to depletion of thealuminum 26 on the surface, the structure can be placed in anothersolution, such as water or an acidic solution. The structure is thensubjected to rapid thermal processing (RTP) at about 500° C. to about700° C. to optimize the grain structure of the copper layer 32. Thelower the RTP temperature, the longer the anneal duration. For example,for RTP at about 500° C., about 45 seconds is the anneal duration. Thehigher the RTP temperature, the shorter the anneal duration. Forexample, for RTP at about 700° C., about 15 seconds is the annealduration. Any remaining aluminum layer 26 and titanium layer 20underlying the aluminum layer 26 are then removed using appropriateetchants, such as dry etchants, to produce the structure illustrated inFIG. 2C. Variations of this example include forming (e.g., sputtering) atungsten plug in the via 36 prior to forming the patterned aluminumlayer 26 over the structure. Copper 32 then deposits only over thetungsten plug, forming a conductive line, such as a digit line. It isalso to be noted that sidewalls of the via 36 are coated with thetitanium layer 20 in FIGS. 2A to 2C, but if collimated sputtering isused to deposit the titanium 20, the sidewalls of the via 36 may not becoated with the titanium layer 20. In that embodiment, in order forcopper to deposit on the titanium layer 20 formed at the bottom of thevia, discontinuous with the titanium layer 20 adjacent the via 36,another aluminum layer 26 would need to contact the titanium layer 20 atthe bottom of the via 36. This second aluminum layer 26 is needed toprovide a titanium/aluminum interface 28 on the titanium layer 20 at thebottom of the via 36. According to other variations of this Example,titanium nitride can be substituted for the titanium layer 20 in theabove example. Other variations will be apparent to one of ordinaryskill in the art.

EXAMPLE 3

Intermediate and resulting structures of this example are illustrated inFIGS. 3A to 3C. An insulating layer 34, such as silicon dioxide, isformed (e.g., by thermally oxidizing silicon) over a silicon substrate22. A via 36 is then defined (e.g., by etching the silicon dioxide toleave an opening through the silicon dioxide having dimensions of thevia) in the insulating layer 34 over an active area in the substrate 22as well known to one skilled in the art. A titanium layer 20 is thenformed (e.g., sputtered, photolithographically masked, and etched) inthe via and on the sidewalls of the via as well as over insulating layer34 to a thickness 24 of about 200 Angstroms. An aluminum layer 26 havinga thickness 27 of about 10,000 Angstroms is then patterned (e.g.,sputtered, photolithographically masked, and etched) over the titaniumlayer 20, leaving an exposed titanium/aluminum interface 28 facing thevia 36, at the top of the sidewall of the via 36, as illustrated in FIG.1A. The aluminum layer 26 is patterned as in a single damascene process,such that copper 32 can at least partially fill the via 36, forming acopper plug therein. To form the copper plug, the structure illustratedin FIG. 3A is plated in a 50 mL aqueous solution containing:

    ______________________________________                                        CuSO.sub.4    0.624         g                                                   EDTA                              0.821 g                                     TMAH                              19.2 mL                                     Triton X                          1 mL                                        HCHO                              0.375 mL                                  Deionized Water                                                                             Remainder (total solution                                                                            volume = 50 mL)                          ______________________________________                                    

to produce the structure illustrated in FIG. 3B. Copper 32 nucleates atthe aluminum/titanium interface 28 and spreads into the via 36. If it isdesired to stop the deposition of copper 32 prior to depletion of thealuminum 26 on the surface, the structure can be placed in anothersolution, such as water or an acidic solution. The structure is thensubjected to rapid thermal processing (RTP) at about 500° C. to about700° C. to optimize the grain structure of the copper layer 32. Thelower the RTP temperature, the longer the anneal duration. For example,for RTP at about 500° C., about 45 seconds is the anneal duration. Thehigher the RTP temperature, the shorter the anneal duration. Forexample, for RTP at about 700° C., about 15 seconds is the annealduration. Any remaining aluminum layer 26 and titanium layer 20underlying the aluminum layer 26 are then removed using appropriateetchants, such as dry etchants, to produce the structure illustrated inFIG. 3C. Variations of this example include substitution of titaniumnitride for the titanium layer 20 in the above example. Other variationswill be apparent to one of ordinary skill in the art.

EXAMPLE 4

Intermediate and resulting structures of this example are illustrated inFIGS. 4A to 4C. A printed circuit board (PCB) 40 is sputtered with athin layer (i.e., a layer having a thickness of about 50 Angstroms toabout 1,000 Angstroms) of titanium 42, as illustrated in FIG. 4A and aswell known to one in the art of PCB manufacture. The titanium 42 is thenpatterned using conventional photolithography and etching to define anarea over which copper is desired. The PCB is then patterned with analuminum layer 26 (e.g., sputtering aluminum 26 onto the PCB,photolithographically masking the aluminum 26, and etching the aluminum26) to produce exposed titanium 44 between the patterned aluminum 26.Copper 32 is then deposited on the exposed titanium 44, as illustratedin FIG. 4B, by plating the structure illustrated in FIG. 4A in a 50 mLaqueous solution containing:

    ______________________________________                                        CuSO.sub.4    0.624         g                                                   EDTA                              0.821 g                                     TMAH                              19.2 mL                                     Triton X                          1 mL                                        HCHO                              0.375 mL                                  Deionized Water                                                                             Remainder (total solution                                                                            volume = 50 mL)                          ______________________________________                                    

Any remaining aluminum layer 26 and titanium layer 42 underlying thealuminum layer 26 are then removed using appropriate etchants, such asdry etchants, to produce the PCB 40 with copper lines 32 thereon, aportion of which is illustrated in FIG. 4C.

All patents, patent applications, and publications disclosed herein areincorporated by reference in their entirety, as if individuallyincorporated. The foregoing detailed description and examples have beengiven for clarity of understanding only. No unnecessary limitations areto be understood therefrom. The invention is not limited to the exactdetails shown and described, for variations obvious to one skilled inthe art will be included within the invention defined by the claims.

What is claimed is:
 1. A method for forming a plug in an integratedcircuit interconnect structure, the method comprising:providing asubstrate; forming an insulating layer on the substrate; defining a viain the insulating layer over an active area in the substrate; forming atitanium-containing layer in the via and over the insulating layer;forming a patterned catalyst layer over the titanium-containing layeradjacent to the via; and at least partially filling the via with copperusing electroless deposition, wherein copper deposition initiates at aninterface between the titanium-containing layer and the catalyst layer.2. The method of claim 1, wherein the method further comprises removingthe patterned catalyst layer.
 3. The method of claim 1, wherein formingthe patterned catalyst layer comprises forming a patterned catalystlayer wherein the catalyst is selected from aluminum, silicon, andchromium.
 4. The method of claim 1, wherein the method further comprisesremoving the titanium-containing layer.
 5. The method of claim 1,wherein at least partially filling the via with copper comprisesoverfilling the via with copper.
 6. The method of claim 5, wherein themethod further comprises removing the overfilled portion of the copper.7. A method for forming an interconnect structure in an integratedcircuit, the method comprising the steps of:providing a substrate;forming an insulating layer on the substrate; defining a via in theinsulating layer over an active area in the substrate; forming apatterned titanium-containing layer in the via and over the insulatinglayer; forming a patterned catalyst layer over the patternedtitanium-containing layer, such that an exposed region of the insulatinglayer surrounds the via; and at least partially filling the via andcovering the exposed region of the insulating layer and patternedtitanium-containing layer adjacent to catalyst material with copperusing electroless deposition.
 8. The method of claim 7, wherein themethod further comprises removing the patterned catalyst layer.
 9. Themethod of claim 7, wherein forming the patterned catalyst layercomprises forming a patterned catalyst layer selected from aluminum,silicon, and chromium.
 10. The method of claim 7, wherein the methodfurther comprises removing the titanium-containing layer.
 11. The methodof claim 7, wherein at least partially filling the via with coppercomprises overfilling the via with copper.
 12. The method of claim 11,wherein the method further comprises removing the overfilled portion ofthe copper.
 13. The method of claim 2, wherein the method furthercomprises removing the titanium-containing layer.
 14. The method ofclaim 8, wherein the method further comprises removing thetitanium-containing layer.
 15. A method for forming a plug in anintegrated circuit interconnect structure, the methodcomprising:providing a substrate; forming an insulating layer on thesubstrate; defining a via in the insulating layer over an active area inthe substrate; forming a titanium-containing layer in the via and overthe insulating layer; forming a patterned catalyst layer over thetitanium-containing layer adjacent to the via; and at least partiallyfilling the via with copper using electroless deposition, wherein copperdeposition occurs on the exposed regions of the titanium-containinglayer in the via and adjacent to catalyst material.
 16. The method ofclaim 15, wherein forming a titanium-containing layer comprises forminga patterned titanium-containing layer.
 17. A method for forming aninterconnect structure in an integrated circuit, the methodcomprising:providing a semiconductor substrate semiconductor; forming aninsulating layer on the substrate; defining a via in the insulatinglayer over an active area in the substrate; forming atitanium-containing layer in the via and over the insulating layer;forming a patterned catalyst layer over the titanium-containing layer;and at least partially filling the via with copper using electrolessdeposition, wherein copper deposition occurs on the exposed regions ofthe titanium-containing layer adjacent to catalyst material.
 18. Themethod of claim 17, wherein forming a titanium-containing layercomprises forming a patterned titanium-containing layer.
 19. The methodof claim 1, wherein the catalyst layer comprises catalyst material thathas an oxidation half-reaction potential having a magnitude that isgreater than a magnitude of a reduction half-reaction potential oftitanium dioxide.
 20. The method of claim 7, wherein the catalyst layercatalyst material that has an oxidation half-reaction potential having amagnitude that is greater than a magnitude of a reduction half-reactionpotential of titanium dioxide.